1. Ceramic-Based Materials (Mainstream Choice)

• High-Q Ceramics: Such as magnesium titanate (MgTiO₃), strontium titanate (SrTiO₃), and calcium titanate (CaTiO₃), featuring high dielectric constants (εᵣ ≈ 20–100) and low loss (tanδ < 0.0002), suitable for high-frequency, low-insertion-loss applications.

• Temperature-Stable Ceramics: Such as magnesium aluminate (MgAl₂O₄) and modified lead zirconate titanate (PZT) formulations, whose temperature coefficient (τf) is adjusted via doping to near-zero or controlled values, meeting demands for harsh environments like base stations.

2. Novel Composite Materials

• Low-Temperature Co‑fired Ceramics (LTCC): Such as glass‑ceramic composite systems (e.g., borosilicate glass + ceramic fillers), balancing low‑temperature sintering capability with good high‑frequency performance.
• Polymer‑Based Composites: Such as PTFE/ceramic powder blends with adjustable dielectric constants (εᵣ ≈ 2–10), suitable for flexible circuits or millimeter‑wave bands.

Key Material Selection Criteria: Dielectric constant (εᵣ) determines device size, loss tangent (tanδ) directly affects Q‑factor, and temperature coefficient (τf) governs frequency stability. Current 5G/6G developments are driving R&D on high‑frequency materials, with high‑purity alumina (Al₂O₃) and aluminum nitride (AlN) seeing increased use in millimeter‑wave applications.

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